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K. E. Newman, J. Shen, and D. Teng, "Effects of strain on structural properties in ordered semiconductors," Superlattices and Microstructures 6, 245 (1989). J. Shen, J. D. Dow, and S. Y. Ren, "Thin quantum-well superlattices of GaAs and (GaAs)1-x(ZnSe)x with ZnSe: possibility of band gaps in blue-green," J. Appl. Phys. 67, 3761 (1990). J. Shen, S. Y. Ren, and J. D. Dow, "Relaxed-lattice model of isolated and paired isoelectronic traps in GaP," Phys. Rev. B 42, 9119 (1990). H. Goronkin, J. Shen, S. Tehrani, R. Droopad, G. N. Maracas, R. N. Legge, and X. T. Zhu, "Enhancement of mobility in pseudomorphic FETs with up and down monolayers," IEEE Transactions on Electron Devices, vol.38, no.12, p2703 (Dec. 1991). H. Goronkin, J. Shen, S. Tehrani, R. Droopad, G. N. Maracas, R. N. Legge, and X. T. Zhu, "Enhancement of mobility in pseudomorphic FET's with up and down monolayers," Jpn. J. Appl. Phys. 31, pp. 2071-2074 (1992). J. Shen, S. Tehrani, H. Goronkin, R. Droopad, and G. Maracas, "Quantum well thickness effect on the deep-shallow duality of Si in AlGaAs/InGaAs heterostructures," J. Appl. Phys. 71, 5985 (1992). J. Shen, S. Y. Ren, and J. D. Dow, "Deep levels in type-II InAs/GaSb superlattices," Phys. Rev. B 46, 6938 (1992). J. Shen, S. Y. Ren, and J. D. Dow, "Deep-shallow transitions and loss of amphoterism in type-II superlattices," Phys. Rev. Letters 69, 1089 (1992). J. Shen, J. D. Dow, S. Y. Ren, S. Tehrani, and H. Goronkin, "Remote n-type modulation doping of InAs quantum wells by 'deep acceptors' in AlSb," J. Appl. Phys. 73, 8313 (1993). S. Y. Ren, J. D. Dow, and J. Shen, "Criteria for Si quantum-well luminescence," J. Appl. Phys. 73, 8458 (1993). J. Shen, H. Goronkin, J. D. Dow, and S. Y. Ren, "Tamm states and donors at InAs/AlSb interfaces," J. Appl. Phys. 77, 1576 (1995). J. Shen, G. Kramer, S. Tehrani, H. Goronkin, and R. Tsui, "Static random access memories based on resonant interband tunneling diodes in the InAs/GaSb/AlSb material system," IEEE Electr. Dev. Lett. 16, 178 (1995). J. Shen, H. Goronkin, J. D. Dow, and S. Y. Ren, "Explanation of the origin of electrons in the unintentionally doped InAs/AlSb system," J. Vac. Sci. Technol. B 13, 1736 (1995). J. Shen, "Mechanisms of valley currents in InAs/AlSb/GaSb resonant interband tunneling diodes," J. Appl. Phys. 78, 6220 (1995). S. Tehrani, J. Shen, H. Goronkin, G. Kramer, R. Tsui, and T. X. Zhu, "Resonant interband tunneling FET," IEEE Electron Dev. Lett. 16, 557 (1995). J. Shen, S. Tehrani, H. Goronkin, G. Kramer, and R. Tsui, "An XNOR device in hybrid InAs/AlSb/GaSb and InGaAs material systems," IEEE Electron Device Lett. 17, 94 (1996). R. Tsui, K. Shiralagi, J. Shen, "Growth of resonant interband tunneling diodes using trimethylamine alane," J. Crystal Growth 164, 491 (1996). S.-F. Ren and J. Shen, "Ab initio pseudopotential calculations of InAs/AlSb heterostructures," J. Appl. Phys. 81, 1169 (1997). K. Shiralagi, J. Shen, and R. Tsui, "Effects of layer design on the performance of InAs/AlSb/GaSb resonant interband tunneling diodes on GaAs substrates," J. Electron Materials 26, 417 (1997). J. Shen, "Logic devices and circuits based on giant magnetoresistance," IEEE Trans. Magnetics 33, 4492 (1997). J.-H. Xu and J. Shen, "Effects of discrete trap levels on carrier transport in organic electroluminescent devices," J. Appl. Phys. 83, 2646 (1998). J. Shen and J. Yang, "Physical mechanisms in double-carrier trap charge limited transport processes in organic electroluminescent devices - a numerical study," J. Appl. Phys. 83, 7706 (1998). J. Shen, "Electrically programmable resistor on semi-insulating GaAs," Semicond. Sci. Technol. 13, A160 (1998). J. Yang and J. Shen, "Doping effects in organic electroluminescent devices," J. Appl. Phys. 84, 2105 (1998). J. Yang and J. Shen, "Effects of descrete trap levels on organic light emitting diodes," J. Appl. Phys. 85, 2699 (1999). V.-E. Choong, S. Shi, J. Curless, F. So, J. Shen, and J. Yang, "Organic light emitting diodes with a bipolar transport layer, " Appl. Phys. Lett. 75, 172 (1999). J. Shen, D. Wang, E. Langlois, W. A. Barrow, P. J. Green, C. W. Tang, and J. Shi, "Degradation mechanisms in organic light emitting diodes," accepted for publication in Synthetic Metals, June 1999. J. Shen, J. Yang, F. So, J.-H. Xu, V. Choong, and H.-C. Lee, "Carrier transport mechanisms in organic light emitting diodes, " submitted to Journal of SID, Sept. 1998. J. Yang and J. Shen, "Effects of hole barrier in bilayer organic light emitting devices," submitted to Appl. Phys. Lett., March 1999. J. Joung, J. Shen, and P. Grodzinski, "Micro pumps based on alternating high gradient magnetic fields," submitted to IEEE Transactions on Magnetics, April 5, 1999. D. Wang and J. Shen, "A theoretical model for carrier transport in disordered organic materials," accepted for publication in Synthetic Metals, June 1999. |
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