|
|
View the Complete List of Publications by Dr. S.
Thomas Picraux HERE
205. STRUCTURE AND CHARACTERIZATION OF
STRAINED-LAYER SUPERLATTICES (chapter 3) in Strained-Layer Superlattices,
S. T. Picraux, B. L. Doyle and J. Y. Tsao, T. P. Pearsall, ed. for
Semiconductors and Semimetals Vol. 33 (Academic Press, Orlando, 1
206. NEAR-THRESHOLD ENERGY DEPENDENCE
OF Xe-INDUCED DISPLACEMENTS ON Ge (001), S. T. Picraux, D. K. Brice, K. M.
Horn, J. Y. Tsao and E. Chason, Nucl. Instrum. & Methods B48,
414 (1990).
207. SURFACE ROUGHENING OF Ge (001)
DURING 200 eV Xe ION BOMBARDMENT AND Ge MOLECULAR BEAM EPITAXY, E. Chason,
J. Y. Tsao, K. M. Horn, S. T. Picraux and H. A. Atwater, J. Vac. Sci
Technol. A8, 2507 (1990).
208. ION-BEAM ENHANCED EPITAXIAL
GROWTH OF Ge (001), E. Chason, P. Bedrossian, K. M. Horn, J. Y. Tsao and S.
T. Picraux, Appl. Phys. Lett. 57, 1793 (1990).
209. HYDROGEN ION BEAM SMOOTHENING OF
Ge(001), K. M. Horn, J. Y. Tsao, E. Chason, D. K. Brice and S. T. Picraux,
J. Appl. Phys. 69, 243 (1991).
210. ANISOTROPIC DISPLACEMENT
THRESHOLD ENERGIES IN SILICON BY MOLECULAR DYNAMICS SIMULATIONS, LeAnn A. Miller,
D. K. Brice, A. K. Prinja and S. T. Picraux, Mat. Res. Soc. Proc. 201,171
(1991).
211. LAYER-BY-LAYER SPUTTERING AND
EPITAXY OF Si(100), P. J. Bedrossian, J. E. Houston, J. Y. Tsao, E. Chason
and S. T. Picraux, Phys. Rev. Letts. 67, 124 (1991).
212. MOLECULAR DYNAMICS SIMULATIONS OF
BULK DISPLACEMENT THRESHOLD ENERGIES IN Si, LeAnn Miller, D. K. Brice, A.
Prinja and S. T. Picraux Radiation Effects & Defects in Solids
(6/21/91, submitted).
213. SIMULATIONS OF LAYER-BY-LAYER
SPUTTERING DURING EPITAXY, E. Chason, P. Bedrossian, J. E. Houston, J. Y.
Tsao and S. T. Picraux, Appl. Phys. Letts. 59, 27 (1991).
214. SIMULATIONS OF LOW-ENERGY ION
BOMBARDMENT AND EPITAXIAL GROWTH, E. Chason, P. Bedrossian, J. Y. Tsao, B.
W. Dodson and S. T. Picraux, Mat. Res. Soc. Proc., 236, 281 (1992).
215. Ge SURFACE DISPLACEMENTS DUE TO
LOW ENERGY PARTICLES, S. T. Picraux, K. M. Horn, E. Chason, J. Y. Tsao, T.
Klitsner, P. Bedrossian, and D. K. Brice, Mat. Res. Soc. Proc. 236,
235 (1992).
216. ION-ASSISTED SURFACE PROCESSING
OF ELECTRONIC MATERIALS, S. T. Picraux, E. Chason (1112), and T. M. Mayer,
MRS Bulletin Vol. XVII, (June, 1992) p.52.
217. METASTABLE Si-Ge-C FORMATION BY
SOLID PHASE EPITAXIAL REGROWTH, J. W. Strane, H. S. Stein, S. R. Lee, B.L.
Doyle, S. T.Picraux and J. W. Mayer, Appl. Phys. Lett. 63, 2786
(1993).
218. METASTABLE SiC AND SiGeC ALLOYS
BY CARBON IMPLANTATION AND SOLID PHASE EPITAXY, J. W. Strane, W. J. Edwards, J. W. Mayer,
H.J. Stein, S.R. Lee, B.L.Doyle, S.T. Picraux, Mat. Res. Soc. Proc. 280,
609 (1993).
219. DISPLACEMENT THRESHOLD ENERGIES
IN Si USING MOLECULAR DYNAMICS, L.
A. Miller, D. K. Brice, A. J. Prinja and
S. T. Picraux, Physical Review B 49, 16953 (1994).
220. SILICON ATOMIC LAYER EPITAXY
BASED ON Si2H6 AND REMOTE He PLASMA BOMBARDMENT, A.
Mahajan S. T. Picraux, J. Irby, D.
Kinosky, R. Qian, S. Banerjee, and A. Tasch, Proceedings, Atomic Layer
Epitaxy Symposium, Raleigh, NC, 6/3/92.
Thin Solid Films.
221. THE ROLE OF STRAIN COMPENSATION
AND REGROWTH INTERFACE INSTABILITIES ON SPEG Si-C AND Si-Ge-C ALLOYS, J. W.
Strane, S. T. Picraux and J. W. Mayer, Proc. Techcon SRC Meeting, June,
1993.
222. INTRA-CASCADE SURFACE
RECOMBINATION OF POINT DEFECTS DURING ION BOMBARDMENT OF Ge(001), J. A. Floro, B. K. Kellerman, E. Chason,
S. T. Picraux, D. K. Brice, and K. M. Horn.
Mat. Res. Soc. Proc., 316, 881 (1994).
223. STABILITY AND PRECIPITATION
KINETICS IN Si1-YCY/Si AND Si1-X-Y GeXCY/Si
HETEROSTRUCTURES PREPARED BY SOLID PHASE EPITAXY, J. W. Strane, S. T.
Picraux, H. J. Stein, S. R. Lee, J. Candelaria, D. Theodore, and J. W.
Mayer. Mat. Res. Soc. Proc., 321,
(1994).
224. PRECIPITATION AND RELAXATION IN
STRAINED Si1-yCy/Si
HETEROSTRUCTURES, J. W. Strane, H. J. Stein, S. R. Lee, S. T. Picraux, J.
K. Watanabe and J. W. Mayer, J. Appl. Phys. 76, 3656 (1994).
225. SURFACE DEFECT PRODUCTION ON
Ge(001) DURING LOW ENERGY ION BOMBARDMENT,
J. A. Floro, B. K. Kellerman,
E. Chason, S. T. Picraux, D. K. Brice and K. M. Horn. J. Appl. Phys. 77, 2351 (1995).
226. OXYGEN ROUGHENING OF Ge(001)
SURFACES, K. M. Horn, E. Chason, J.
Y. Tsao, J. A. Floro and S. T. Picraux.
Surface Science 320, 174 (1994).
227. DEFECT PRODUCTION AND
RECOMBINATION DURING LOW-ENERGY ION PROCESSING, B. K. Kellerman, J. A.
Floro, E. H. Chason, D. K. Brice, S. T. Picraux, J. Vac. Sci. Technol. A 13,
972 (1995).
228. SMOOTHING DURING ION-ASSISTED
GROWTH BY TRANSIENT ION BEAM-INDUCED DEFECTS, B. K. Kellerman, E. H.
Chason, J. A. Floro, S. T. Picraux, J. M. White, Mat. Res. Soc. Proc., 388,
349 (1995).
229. IMPURITY GETTERING, S. T.
Picraux, Proceedings of the DOE Council on Materials, New Directions for
Ion Beams in Semiconductor Processing, Santa Fe, NM, 5/4-7/95. SAND95-0794C
230. THE ROLE OF TRANSIENT ION-INDUCED
DEFECTS IN ION BEAM-ASSISTED GROWTH, B. K. Kellerman, E. H. Chason, J. A.
Floro, S. T. Picraux, J. M. White, Appl. Phys. Letts., 67, 1703
(1995).
231. NSF WORKSHOP: SUPPORTING
MATERIALS RESEARCH, S. T. Picraux, Public Affairs Forum, MRS Bulletin,
(May, 1995) p. 12.
232. CARBON INCORPORATION INTO Si AT
HIGH CONCENTRATIONS BY ION IMPLANATATION AND SOLID PHASE EPITAXY, J. W.
Strane, S. R. Lee, H. J. Stein, S. T. Picraux, J. K. Watanabe, J. W. Mayer,
J. Appl. Phys., 79, 637 (1996).
233. DIELECTRIC FUNCTIONS AND BAND
GAPS OF Sil-xCx and Si0.924-xGe0.076Cx
(0£X£0.014) SEMICONDUCTOR ALLOYS GROWN ON Si, H. Lee, J. A. Floro,
J. Strane, E. D. Jones, T. Mayer and S. T. Picraux, Mat. Res. Soc. Proc. 379,
211 (1995).
234. OPTICAL CHARACTERIZATION OF Sil-xCx/Si
(0£X£0.014) SEMICONDUCTOR ALLOYS, H. Lee, S. R. Kurtz, J. A.
Floro, J. Strane, C. H. Seager, S. R. Lee, E. D. Jones, J. F. Nelson, T.
Mayer and S. T. Picraux, Jpn. J. Appl. Phys. 34, L1340 (1995).
235. ORGANIZING R&D FOR THE 21st
CENTURY: ACCELERATING INNOVATION
WITH LIMITED RESOURCES, S. T. Picraux, Public Affairs Forum, MRS Bulletin,
(July, 1995) p.13.
236. ENERGETIC ION BEAMS IN
SEMICONDUCTOR PROCESSING: SUMMARY OF
A DOE PANEL STUDY, S. T. Picraux, E. Chason, J. M. Poate, J. O. Borland, M.
I Current, T. Diaz de la Rubia, D. J. Eaglesham, O. W. Holland, M. E. Law,
C. W. Magee, J. W. Mayer, J. Melngailis, and A. F. Tasch, Mat. Res. Soc.
Proc., 396, 859 (1996).
237. ION BEAMS IN SILICON PROCESSING
AND CHARACTERIZATION, E. Chason, S. T. Picraux, J. M. Poate, J. O. Borland,
M. I Current, T. Diaz de la Rubia, D. J. Eaglesham, O. W. Holland, M. E.
Law, C. W. Magee, J. W. Mayer, J. Melngailis, and A. F. Tasch, J. Appl.
Phys.--Applied Physics Reviews, 81, 6513 (1997).
238. INTEGRATED MICROSYSTEMS, S. T.
Picraux and P. J. McWhorter, IEEE Spectrum (Invited Review), Vol. 35, p.
24-33 (1998).
239. APPLICATIONS: ENERGY AND CHEMICALS INDUSTRIES (Chapter
9), D. Cox and S. T. Picraux in Nanotechnology Research Directions, M. C. Rocco, R. S. Williams, and P.
Alivisato, Eds. (Kluwer Academic Publishers, Boston,2000) pp. 173-204.
240. NATIONAL NEEDS DRIVERS FOR
NANOTECHNOLOGY, G. Yonas and S. T. Picraux, in Societal Implications of
Nanoscience and Nanotechnology, (Proceedings of a National Science,
Engineering, and Technology Workshop) Ed. by M. C. Roco and W. S.
Bainbridge, (National Science Foundation, Arlington, Virginia, March
2001) pp. 37-44.
241. IMPLICATIONS OF EMERGING MICRO-
AND NANOTECHNOLOGIES, S.R.J. Brueck, S. T. Picraux, et al. (The National
Academies Press, Washington, 2002) pp 1-243.
242. NANOTECHNOLOGY, S. T. Picraux, in
Encyclopaedia Britanica, 2003.
243. OBSERVATIONS OF PHOTO-SWITCHING
IN TETHERED SPIROPYRANS USING THE INTERFACIAL FORCE MICROSCOPE, B. C. Bunker,
B. I. Kim, J. E. Houston, R. Rosario, A. A. Garcia, M. Hayes, D. Gust, and
S. T. Picraux, Nano Letters (submitted).
|
|
