Lecture Notes on
EEE598:
Advanced Device Simulation
These
lecture notes have been prepared by Dragica Vasileska and Stephen M. Goodnick
during the course of teaching the EEE598: Computational Electronics Class at Arizona State University. This class is a modification of an earlier
598 class. The subject topics that will be covered during the course of
teaching this class include:
Review
of semiconductor physics and transport
o
Energy band structure (Empirical pseudopotential method)
o
Review of the Drift Diffusion and the Hydrodynamic
models
o
Notes
on DD Model
o
Notes
on HD Model
o
Introduction
of the BTE
o
Derivation
of the Fermi’s Golden Rule
o
Scattering mechanisms description
o
Single
particle
o
Ensemble
o
Low-field
and high-field transport characteristics calculation
o
Simulation
examples
o
Jacoboni Paper on Monte Carlo
Solving the Poisson and the Maxwell’s equations
o
Field
equations – Numerical solution techniques: finite difference in 1D-3D, direct
vs. iterative methods, rate of convergence estimate, mesh generation, boundary
conditions
o
The
multi-grid method: Part1, Part2,
Part3, Part4 and Part5
o
Multi-grid
tutorials: Numerical Recipes, Multi-grid description
o
Description of the Conjugate
Gradient Methods, Math-works
on conjugate gradient methods
o
Example
of a 1D Poisson Equation solver
o
Solution
of the Maxwell Equations
2.
The Finite Difference Time Domain Technique –
Part1
3.
The Finite Difference Time Domain Technique –
Part2
4.
The Finite Difference Time Domain Technique –
Part3
5.
The Finite Difference Time Domain Technique –
Part4
Particle-Based device simulator
o
Stability
Criteria for time-step and mesh-size
o
Particle
dynamics with boundary conditions (modeling of the ohmic and Schottky contacts,
artificial boundaries)
o
Particle-mesh coupling techniques (NGP, NEC, CIC, etc.)
o
Current
calculation techniques
Examples
of device modeling
o
Si MESFET Simulations (Tarik Khan)
o
SiGe
devices – Full-Band Simulations (
o
FINFETs
(
Advanced
Topics
o
Many-Body Effects: Molecular
Dynamics, P3M approach, Corrected Coulomb approach, FMM, application in device
simulators
o
Quantum corrections using effective
potential techniques
o Numerical solution of the 1D Schrodinger-Poisson problem
o Scattering theory approach due to Lundstrom/McKelvey
Quantum
Simulation
o
Description of the transfer matrix approach:
Transmission coefficient calculation, Current calculation: Tsu-Esaki formula
o
Supriyo
Datta: From atom to transistor
2.
Schrodinger Equation – Basic Concepts
3.
Finite Differences, Examples
4.
Basis functions – As a computational tool,
Basis functions – As a conceptual tool
5.
Density Matrix I, Density Matrix II
6.
Introduction
to Green’s functions: Second
Quantization, Wick’s Theorem
S-matrix,
Perturbation Expansion, Green’s functions,Feynman diagrams, partial summation
method:
7.
Coherent Transport: Overview
8.
Transmission
9.
Non-Equilibrium Density Matrix
10. Inflow/Outflow
11.
Quantum
Transport: From Atom to Transistors – Ch2-5, Ch67, Ch89
o
Brief description of the Green’s functions approach
o
Simulation
of a Resonant Tunneling Diode (RTD) without and with the inclusion of
scattering
Suggested
o
o
o
Shaikh Ahmed PhD Thesis on Effective Potentials and
Discrete Impurities
This
Web-page is created and maintained by Dragica Vasileska.